Nexperia BC857BS,115 Dual PNP Transistor, -100 mA, -45 V, 6-Pin UMT
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia
P.O.A.
100
P.O.A.
100
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Please check again later.
| quantity | Unit price |
|---|---|
| 100 - 100 | P.O.A. |
| 200 - 400 | P.O.A. |
| 500 - 900 | P.O.A. |
| 1000 - 1900 | P.O.A. |
| 2000+ | P.O.A. |
Technical documents
Specifications
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-45 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+150 °C
Country of Origin
Malaysia
Product details
Small Signal PNP Transistors, Nexperia
Bipolar Transistors, Nexperia