Infineon BFR106E6327HTSA1 NPN RF Bipolar Transistor, 210 mA, 16 V, 3-Pin SOT-23

RS Stock No.: 892-2324Brand: InfineonManufacturers Part No.: BFR 106 E6327
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Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

210 mA

Maximum Collector Emitter Voltage

16 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

3 V

Maximum Operating Frequency

5 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 1mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Stock information temporarily unavailable.

P.O.A.

Infineon BFR106E6327HTSA1 NPN RF Bipolar Transistor, 210 mA, 16 V, 3-Pin SOT-23
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

P.O.A.

Infineon BFR106E6327HTSA1 NPN RF Bipolar Transistor, 210 mA, 16 V, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 50
1P.O.A.
51P.O.A.
101P.O.A.
151P.O.A.
201P.O.A.
251P.O.A.
301P.O.A.
351P.O.A.
401P.O.A.
451P.O.A.
501P.O.A.
551P.O.A.
601P.O.A.
651P.O.A.
701P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

210 mA

Maximum Collector Emitter Voltage

16 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

3 V

Maximum Operating Frequency

5 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 1mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon