MagnaChip MPMC100B120RH, 7DM-2 , N-Channel Series IGBT Module, 100 A max, 1200 V, Panel Mount

RS Stock No.: 784-6294Brand: MagnaChipManufacturers Part No.: MPMC100B120RH
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Technical documents

Specifications

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

694 W

Package Type

7DM-2

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Switching Speed

70kHz

Transistor Configuration

Series

Dimensions

94 x 48 x 22mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Korea, Republic Of

Product details

IGBT Modules, MagnaChip

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

P.O.A.

MagnaChip MPMC100B120RH, 7DM-2 , N-Channel Series IGBT Module, 100 A max, 1200 V, Panel Mount

P.O.A.

MagnaChip MPMC100B120RH, 7DM-2 , N-Channel Series IGBT Module, 100 A max, 1200 V, Panel Mount

Stock information temporarily unavailable.

Stock information temporarily unavailable.

Technical documents

Specifications

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

694 W

Package Type

7DM-2

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Switching Speed

70kHz

Transistor Configuration

Series

Dimensions

94 x 48 x 22mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Country of Origin

Korea, Republic Of

Product details

IGBT Modules, MagnaChip

IGBT Discretes & Modules

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.