onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92

RS Stock No.: 806-1750PBrand: onsemiManufacturers Part No.: J109
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Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 40mA

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

12 Ω

Mounting Type

Through Hole

Package Type

TO-92

Pin Count

3

Drain Gate On-Capacitance

85pF

Source Gate On-Capacitance

85pF

Dimensions

4.58 x 3.86 x 4.58mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

4.58mm

Height

4.58mm

Width

3.86mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

P.O.A.

(ex VAT)

onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92
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P.O.A.

(ex VAT)

onsemi J109 N-Channel JFET, Idss min. 40mA, 3-Pin TO-92

Stock information temporarily unavailable.

Select packaging type

Production pack (undefined)

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

min. 40mA

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

12 Ω

Mounting Type

Through Hole

Package Type

TO-92

Pin Count

3

Drain Gate On-Capacitance

85pF

Source Gate On-Capacitance

85pF

Dimensions

4.58 x 3.86 x 4.58mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

4.58mm

Height

4.58mm

Width

3.86mm

Product details

N-channel JFET, Fairchild Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.