STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6

RS Stock No.: 202-5496Brand: STMicroelectronicsManufacturers Part No.: STB33N60DM6
brand-logo
View all in MOSFETs

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1

Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 2) (ex VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6
Select packaging type

P.O.A.

Each (In a Pack of 2) (ex VAT)

STMicroelectronics ST SiC N-Channel MOSFET Module, 25 A, 600 V Depletion, 3-Pin D2PAK STB33N60DM6
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

ST

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.115 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

4.75V

Transistor Material

SiC

Number of Elements per Chip

1