Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
500 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.75 x 1.3mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
500 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
500 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
3.04 x 1.75 x 1.3mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.