Infineon FF1200R12IE5PBPSA1 Dual IGBT Module, 1.2 kA 1200 V, 10-Pin PRIME2
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
1.2 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
PRIME2
Configuration
Dual
Channel Type
N
Pin Count
10
Transistor Configuration
Dual
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P.O.A.
Each (In a Tray of 3) (ex VAT)
Infineon FF1200R12IE5PBPSA1 Dual IGBT Module, 1.2 kA 1200 V, 10-Pin PRIME2
3
P.O.A.
Each (In a Tray of 3) (ex VAT)
Infineon FF1200R12IE5PBPSA1 Dual IGBT Module, 1.2 kA 1200 V, 10-Pin PRIME2
Stock information temporarily unavailable.
3
Stock information temporarily unavailable.
Please check again later.
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
1.2 kA
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
PRIME2
Configuration
Dual
Channel Type
N
Pin Count
10
Transistor Configuration
Dual