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Semikron Danfoss SKM400GB12E4 Dual IGBT Module, 616 A 1200 V, 7-Pin SEMITRANS3, Screw Mount

RS Stock No.: 125-1114Brand: Semikron DanfossManufacturers Part No.: SKM400GB12E4Distrelec Article No.: 30088727
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Technical documents

Specifications

Maximum Continuous Collector Current

616 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

2

Configuration

Dual

Package Type

SEMITRANS3

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Switching Speed

12kHz

Transistor Configuration

Half Bridge

Dimensions

106.4 x 61.4 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Country of Origin

Slovakia

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Stock information temporarily unavailable.

P.O.A.

Semikron Danfoss SKM400GB12E4 Dual IGBT Module, 616 A 1200 V, 7-Pin SEMITRANS3, Screw Mount

P.O.A.

Semikron Danfoss SKM400GB12E4 Dual IGBT Module, 616 A 1200 V, 7-Pin SEMITRANS3, Screw Mount
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Maximum Continuous Collector Current

616 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

2

Configuration

Dual

Package Type

SEMITRANS3

Mounting Type

Screw Mount

Channel Type

N

Pin Count

7

Switching Speed

12kHz

Transistor Configuration

Half Bridge

Dimensions

106.4 x 61.4 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Country of Origin

Slovakia

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.