Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
Technical documents
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
8
P.O.A.
Each (In a Box of 8) (ex VAT)
Semikron SKM150GB12F4 Half Bridge IGBT Transistor Module, 150 A 1200 V
Stock information temporarily unavailable.
8
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You may be interested in
P.O.A.Each (ex VAT)
Technical documents
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
You may be interested in
P.O.A.Each (ex VAT)