Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP

RS Stock No.: 170-2364PBrand: InfineonManufacturers Part No.: BFP840FESDH6327XTSA1
brand-logo
View all in Bipolar Transistors

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

75 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

2.9 V

Maximum Operating Frequency

85 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.4 x 0.8 x 0.55mm

Maximum Operating Temperature

+150 °C

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP
Select packaging type

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

75 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

2.9 V

Maximum Operating Frequency

85 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.4 x 0.8 x 0.55mm

Maximum Operating Temperature

+150 °C