Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6 GHz
Pin Count
3
Dimensions
2.9 x 1.3 x 1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
90 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
6 GHz
Pin Count
3
Dimensions
2.9 x 1.3 x 1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details