DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole

RS Stock No.: 182-7143Brand: DiodesZetexManufacturers Part No.: DGTD120T25S1PT
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Technical documents

Specifications

Maximum Continuous Collector Current

50 A, 100 (Pulsed) A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

348 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.31 x 21.46mm

Gate Capacitance

3942pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Country of Origin

China

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P.O.A.

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole
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P.O.A.

DiodesZetex DGTD120T25S1PT IGBT, 50 A, 100 (Pulsed) A 1200 V, 3-Pin TO-247, Through Hole
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Maximum Continuous Collector Current

50 A, 100 (Pulsed) A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

348 W

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Dimensions

16.26 x 5.31 x 21.46mm

Gate Capacitance

3942pF

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Country of Origin

China