Fuji 2MBI900VXA-120P-50 Series IGBT Module, 900 A 1200 V, 4-Pin M271, Screw Mount
Technical documents
Specifications
Brand
FujiMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
5.1 kW
Package Type
M271
Configuration
Series
Mounting Type
Screw Mount
Channel Type
N
Pin Count
4
Dimensions
172 x 89 x 38mm
Product details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
1
P.O.A.
1
Technical documents
Specifications
Brand
FujiMaximum Continuous Collector Current
900 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
5.1 kW
Package Type
M271
Configuration
Series
Mounting Type
Screw Mount
Channel Type
N
Pin Count
4
Dimensions
172 x 89 x 38mm
Product details
IGBT Modules 2-Pack, Fuji Electric
V-Series, 6th Generation Field-Stop
U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.