Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343

RS Stock No.: 167-964Brand: InfineonManufacturers Part No.: BFP183WH6327XTSA1
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

65 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

450 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8000 MHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

0.9 x 2 x 1.25mm

Height

0.9mm

Country of Origin

Malaysia

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343
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P.O.A.

Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343
Stock information temporarily unavailable.
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quantityUnit price
50 - 200P.O.A.
250 - 450P.O.A.
500 - 950P.O.A.
1000 - 2450P.O.A.
2500+P.O.A.
You may be interested in

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

65 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

450 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8000 MHz

Pin Count

4

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Dimensions

0.9 x 2 x 1.25mm

Height

0.9mm

Country of Origin

Malaysia

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

You may be interested in