Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
450 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8000 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
0.9 x 2 x 1.25mm
Height
0.9mm
Country of Origin
Malaysia
Product details
RF Bipolar Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
Standard
50
P.O.A.
Standard
50
Buy in bulk
quantity | Unit price |
---|---|
50 - 200 | P.O.A. |
250 - 450 | P.O.A. |
500 - 950 | P.O.A. |
1000 - 2450 | P.O.A. |
2500+ | P.O.A. |
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
65 mA
Maximum Collector Emitter Voltage
12 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
450 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
2 V
Maximum Operating Frequency
8000 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
0.9 x 2 x 1.25mm
Height
0.9mm
Country of Origin
Malaysia
Product details