ISSI IS42S32800D-7TL, SDRAM 256Mbit Surface Mount, 143MHz, 86-Pin TSOP
Technical documents
Specifications
Brand
ISSIMemory Size
256Mbit
Organisation
8M x 32 bit
Data Rate
143MHz
Data Bus Width
32bit
Address Bus Width
14bit
Number of Bits per Word
32bit
Maximum Random Access Time
6.5ns
Number of Words
8M
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
86
Dimensions
22.42 x 10.29 x 1.05mm
Height
1.05mm
Length
22.42mm
Minimum Operating Supply Voltage
3 V
Minimum Operating Temperature
0 °C
Maximum Operating Temperature
+70 °C
Maximum Operating Supply Voltage
3.6 V
Width
10.29mm
Product details
Dynamic RAM, ISSI
ISSI SDR SDRAM range offers synchronous interface with programmable CAS Latency (2/3 clocks). High speed data transfer is achieved using the pipeline process and the Synchronous DRAM SDR series offer burst read/write and burst read/single write making them ideally for use in computers applications. ISSI’s SDR SDRAM devices come in a range of different organisations and memory sizes, operating on a 3.3V power supply.
LVTTL interface
Input/output signals refer to the rising edge of the clock input
Programmable burst sequence: Sequential/Interleave; Programmable burst length
Random column address every clock cycle
Self-refresh and Auto Refresh mode
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P.O.A.
Production pack (Tray)
1
P.O.A.
Production pack (Tray)
1
Technical documents
Specifications
Brand
ISSIMemory Size
256Mbit
Organisation
8M x 32 bit
Data Rate
143MHz
Data Bus Width
32bit
Address Bus Width
14bit
Number of Bits per Word
32bit
Maximum Random Access Time
6.5ns
Number of Words
8M
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
86
Dimensions
22.42 x 10.29 x 1.05mm
Height
1.05mm
Length
22.42mm
Minimum Operating Supply Voltage
3 V
Minimum Operating Temperature
0 °C
Maximum Operating Temperature
+70 °C
Maximum Operating Supply Voltage
3.6 V
Width
10.29mm
Product details
Dynamic RAM, ISSI
ISSI SDR SDRAM range offers synchronous interface with programmable CAS Latency (2/3 clocks). High speed data transfer is achieved using the pipeline process and the Synchronous DRAM SDR series offer burst read/write and burst read/single write making them ideally for use in computers applications. ISSI’s SDR SDRAM devices come in a range of different organisations and memory sizes, operating on a 3.3V power supply.
LVTTL interface
Input/output signals refer to the rising edge of the clock input
Programmable burst sequence: Sequential/Interleave; Programmable burst length
Random column address every clock cycle
Self-refresh and Auto Refresh mode