Nexperia PBSS4140DPN,115 Dual NPN/PNP Transistor, 1 A, 40 V, 6-Pin TSOP

RS Stock No.: 518-1485Brand: NexperiaManufacturers Part No.: PBSS4140DPN,115
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Technical documents

Specifications

Transistor Type

NPN/PNP

Maximum DC Collector Current

1 A

Maximum Collector Emitter Voltage

40 V

Package Type

TSOP

Mounting Type

Surface Mount

Maximum Power Dissipation

370 mW

Minimum DC Current Gain

300

Transistor Configuration

Isolated

Maximum Collector Base Voltage

40 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

150 MHz

Pin Count

6

Number of Elements per Chip

2

Dimensions

1 x 3.1 x 1.7mm

Maximum Operating Temperature

+150 °C

Country of Origin

Malaysia

Product details

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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P.O.A.

Nexperia PBSS4140DPN,115 Dual NPN/PNP Transistor, 1 A, 40 V, 6-Pin TSOP
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P.O.A.

Nexperia PBSS4140DPN,115 Dual NPN/PNP Transistor, 1 A, 40 V, 6-Pin TSOP
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit price
10 - 40P.O.A.
50 - 190P.O.A.
200 - 490P.O.A.
500 - 990P.O.A.
1000+P.O.A.

Technical documents

Specifications

Transistor Type

NPN/PNP

Maximum DC Collector Current

1 A

Maximum Collector Emitter Voltage

40 V

Package Type

TSOP

Mounting Type

Surface Mount

Maximum Power Dissipation

370 mW

Minimum DC Current Gain

300

Transistor Configuration

Isolated

Maximum Collector Base Voltage

40 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

150 MHz

Pin Count

6

Number of Elements per Chip

2

Dimensions

1 x 3.1 x 1.7mm

Maximum Operating Temperature

+150 °C

Country of Origin

Malaysia

Product details

Low Saturation Voltage Dual NPN/PNP Transistors, Nexperia

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia