onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225

RS Stock No.: 184-4314Brand: onsemiManufacturers Part No.: MJE200GIMPA: 0
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Technical documents

Specifications

Number of Elements per Chip

1

Transistor Type

NPN

Pin Count

3

Transistor Configuration

Single

Minimum DC Current Gain

45

Mounting Type

Through Hole

Maximum Emitter Base Voltage

8 V dc

Maximum Operating Temperature

+150 °C

Maximum Operating Frequency

10 MHz

Maximum Collector Base Voltage

25 V dc

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

40 V

Maximum Power Dissipation

15 W

Package Type

TO-225

Batteries

3 x AAA Battery

Dimensions

7.8 x 3 x 11.1mm

Country of Origin

China

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Stock information temporarily unavailable.

P.O.A.

onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225

500

Available in multiples of 500
500P.O.A.
1000P.O.A.
1500P.O.A.
2000P.O.A.
2500P.O.A.
3000P.O.A.
3500P.O.A.
4000P.O.A.
4500P.O.A.
5000P.O.A.
5500P.O.A.
6000P.O.A.
6500P.O.A.
7000P.O.A.
7500P.O.A.

P.O.A.

onsemi MJE200G NPN Transistor, 10 A, 40 V, 3-Pin TO-225
Stock information temporarily unavailable.

500

Available in multiples of 500
500P.O.A.
1000P.O.A.
1500P.O.A.
2000P.O.A.
2500P.O.A.
3000P.O.A.
3500P.O.A.
4000P.O.A.
4500P.O.A.
5000P.O.A.
5500P.O.A.
6000P.O.A.
6500P.O.A.
7000P.O.A.
7500P.O.A.

Technical documents

Specifications

Number of Elements per Chip

1

Transistor Type

NPN

Pin Count

3

Transistor Configuration

Single

Minimum DC Current Gain

45

Mounting Type

Through Hole

Maximum Emitter Base Voltage

8 V dc

Maximum Operating Temperature

+150 °C

Maximum Operating Frequency

10 MHz

Maximum Collector Base Voltage

25 V dc

Maximum DC Collector Current

10 A

Maximum Collector Emitter Voltage

40 V

Maximum Power Dissipation

15 W

Package Type

TO-225

Batteries

3 x AAA Battery

Dimensions

7.8 x 3 x 11.1mm

Country of Origin

China