onsemi MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

RS Stock No.: 773-7816Brand: onsemiManufacturers Part No.: MMBFJ177LT1G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Product details

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

onsemi MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
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Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

P.O.A.

onsemi MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10P.O.A.
20P.O.A.
30P.O.A.
40P.O.A.
50P.O.A.
60P.O.A.
70P.O.A.
80P.O.A.
90P.O.A.
100P.O.A.
110P.O.A.
120P.O.A.
130P.O.A.
140P.O.A.
150P.O.A.

Technical documents

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Height

1.01mm

Width

1.4mm

Product details

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.