QRD1113 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package

RS Stock No.: 184-1562PBrand: onsemiManufacturers Part No.: QRD1113
brand-logo
View all in Phototransistors

Technical documents

Specifications

Brand

onsemi

Spectrums Detected

Infrared

Typical Fall Time

50µs

Typical Rise Time

10µs

Number of Channels

1

Maximum Dark Current

100nA

Number of Pins

4

Mounting Type

Through Hole

Package Type

Custom 4L

Dimensions

4.39 x 6.1 x 4.65mm

Collector Current

0.3 (Minimum)mA

Maximum Wavelength Detected

940nm

Spectral Range of Sensitivity

940 nm

Emitter Collector Voltage

5V

Collector Emitter Voltage

30V

Length

4.39mm

Width

6.1mm

Output Signal Type

Phototransistor

Height

4.65mm

Saturation Voltage

0.4V

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

P.O.A.

QRD1113 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package
Select packaging type

P.O.A.

QRD1113 onsemi, IR Phototransistor, Through Hole 4-Pin Custom 4L package
Stock information temporarily unavailable.
Select packaging type

Technical documents

Specifications

Brand

onsemi

Spectrums Detected

Infrared

Typical Fall Time

50µs

Typical Rise Time

10µs

Number of Channels

1

Maximum Dark Current

100nA

Number of Pins

4

Mounting Type

Through Hole

Package Type

Custom 4L

Dimensions

4.39 x 6.1 x 4.65mm

Collector Current

0.3 (Minimum)mA

Maximum Wavelength Detected

940nm

Spectral Range of Sensitivity

940 nm

Emitter Collector Voltage

5V

Collector Emitter Voltage

30V

Length

4.39mm

Width

6.1mm

Output Signal Type

Phototransistor

Height

4.65mm

Saturation Voltage

0.4V