ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

RS Stock No.: 171-5593Brand: ROHMManufacturers Part No.: RGT30NS65DGC9
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Technical documents

Specifications

Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

133 W

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

Country of Origin

Japan

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P.O.A.

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

ROHM RGT30NS65DGC9, P-Channel IGBT, 30 A 650 V, 3+Tab-Pin I2PAK, Through Hole
Stock information temporarily unavailable.

5

Available in multiples of 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

Technical documents

Specifications

Brand

ROHM

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

30V

Number of Transistors

1

Maximum Power Dissipation

133 W

Package Type

TO-262

Mounting Type

Through Hole

Channel Type

P

Pin Count

3+Tab

Transistor Configuration

Single

Dimensions

10.1 x 4.5 x 9mm

Minimum Operating Temperature

-40 °C

Gate Capacitance

780pF

Maximum Operating Temperature

+175 °C

Country of Origin

Japan