Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
TO-236MOD (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
70
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2.9 x 1.5 x 1.1mm
Country of Origin
Thailand
Product details
Small Signal NPN Transistors, Toshiba
Bipolar Transistors, Toshiba
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum DC Collector Current
150 mA
Maximum Collector Emitter Voltage
50 V
Package Type
TO-236MOD (SC-59)
Mounting Type
Surface Mount
Maximum Power Dissipation
150 mW
Minimum DC Current Gain
70
Transistor Configuration
Single
Maximum Collector Base Voltage
60 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
80 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+125 °C
Dimensions
2.9 x 1.5 x 1.1mm
Country of Origin
Thailand
Product details