Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS Stock No.: 253-3508Brand: BournsManufacturers Part No.: BIDW50N65T
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Technical documents

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Package Type

TO-247

Configuration

Single Diode

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P.O.A.

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

600

Available in multiples of 600
600P.O.A.
1200P.O.A.
1800P.O.A.
2400P.O.A.
3000P.O.A.
3600P.O.A.
4200P.O.A.
4800P.O.A.
5400P.O.A.
6000P.O.A.
6600P.O.A.
7200P.O.A.
7800P.O.A.
8400P.O.A.
9000P.O.A.

P.O.A.

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Stock information temporarily unavailable.

600

Available in multiples of 600
600P.O.A.
1200P.O.A.
1800P.O.A.
2400P.O.A.
3000P.O.A.
3600P.O.A.
4200P.O.A.
4800P.O.A.
5400P.O.A.
6000P.O.A.
6600P.O.A.
7200P.O.A.
7800P.O.A.
8400P.O.A.
9000P.O.A.

Technical documents

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

416 W

Package Type

TO-247

Configuration

Single Diode