Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247

RS Stock No.: 253-3509PBrand: BournsManufacturers Part No.: BIDW50N65T
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Technical documents

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode

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P.O.A.

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
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Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

Bourns

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

416 W

Number of Transistors

1

Package Type

TO-247

Configuration

Single Diode