Infineon SRAM, CY62157ELL-45ZSXI- 8Mbit
Technical documents
Specifications
Memory Size
8Mbit
Organisation
512k x 16 bit
Number of Words
512K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Height
1.04mm
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Country of Origin
United States
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
P.O.A.
Production pack (Tray)
1
P.O.A.
Stock information temporarily unavailable.
Production pack (Tray)
1
Stock information temporarily unavailable.
Technical documents
Specifications
Memory Size
8Mbit
Organisation
512k x 16 bit
Number of Words
512K
Number of Bits per Word
16bit
Maximum Random Access Time
45ns
Address Bus Width
16bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
5.5 V
Height
1.04mm
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
4.5 V
Country of Origin
United States
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.