Infineon SRAM, CY62157EV30LL-45BVXI- 8Mbit
Technical documents
Specifications
Memory Size
8Mbit
Organisation
1M x 8 bit, 512K x 16 bit
Number of Words
512K
Number of Bits per Word
8 bit, 16bit
Maximum Random Access Time
45ns
Address Bus Width
8 bit, 16 bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
VFBGA
Pin Count
48
Dimensions
6 x 8 x 0.79mm
Maximum Operating Supply Voltage
3.6 V
Height
0.79mm
Maximum Operating Temperature
+85 °C
Length
6mm
Width
8mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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P.O.A.
1
P.O.A.
1
Technical documents
Specifications
Memory Size
8Mbit
Organisation
1M x 8 bit, 512K x 16 bit
Number of Words
512K
Number of Bits per Word
8 bit, 16bit
Maximum Random Access Time
45ns
Address Bus Width
8 bit, 16 bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
VFBGA
Pin Count
48
Dimensions
6 x 8 x 0.79mm
Maximum Operating Supply Voltage
3.6 V
Height
0.79mm
Maximum Operating Temperature
+85 °C
Length
6mm
Width
8mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.