Infineon SRAM, CY62158EV30LL-45ZSXI- 8Mbit
Technical documents
Specifications
Memory Size
8Mbit
Organisation
1024K x 8 bit
Number of Words
1024K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Height
1.04mm
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
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P.O.A.
1
P.O.A.
1
Technical documents
Specifications
Memory Size
8Mbit
Organisation
1024K x 8 bit
Number of Words
1024K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Height
1.04mm
Maximum Operating Temperature
+85 °C
Length
18.51mm
Width
10.26mm
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.2 V
Product details
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.