Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
4 (Min.) MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Country of Origin
China
Product details
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
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P.O.A.
2000
P.O.A.
2000
Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
700 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
1.1 W
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Maximum Operating Frequency
4 (Min.) MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
4.7 x 3.7 x 4.7mm
Country of Origin
China
Product details