Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
800 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.25 V
Maximum Collector Cut-off Current
100nA
Dimensions
4.77 x 2.41 x 4.01mm
Width
2.41mm
Minimum Operating Temperature
-55 °C
Height
4.01mm
Maximum Power Dissipation
1 W
Length
4.77mm
Maximum Operating Temperature
+200 °C
Country of Origin
China
Product details
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
800 mA
Maximum Collector Emitter Voltage
60 V
Maximum Emitter Base Voltage
10 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Collector Base Voltage
80 V
Maximum Collector Emitter Saturation Voltage
1.25 V
Maximum Collector Cut-off Current
100nA
Dimensions
4.77 x 2.41 x 4.01mm
Width
2.41mm
Minimum Operating Temperature
-55 °C
Height
4.01mm
Maximum Power Dissipation
1 W
Length
4.77mm
Maximum Operating Temperature
+200 °C
Country of Origin
China
Product details
