Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-40 V, +40 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
2
Length
1.7mm
Maximum Operating Temperature
+150 °C
Height
0.6mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-563
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-40 V, +40 V
Width
1.25mm
Transistor Material
Si
Number of Elements per Chip
2
Length
1.7mm
Maximum Operating Temperature
+150 °C
Height
0.6mm
Minimum Operating Temperature
-55 °C
Product details
