Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.8 V
Maximum Collector Base Voltage
140 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Height
1.6mm
Width
2.6mm
Maximum Power Dissipation
2.8 W
Minimum Operating Temperature
-55 °C
Dimensions
4.6 x 2.6 x 1.6mm
Maximum Operating Temperature
+150 °C
Length
4.6mm
Country of Origin
China
Product details
Darlington Transistors, Diodes Inc
Transistors, Diodes Inc
Stock information temporarily unavailable.
Please check again later.
P.O.A.
1000
P.O.A.
1000
Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
120 V
Maximum Emitter Base Voltage
10 V
Package Type
SOT-89
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
5000
Maximum Base Emitter Saturation Voltage
1.8 V
Maximum Collector Base Voltage
140 V
Maximum Collector Emitter Saturation Voltage
1.5 V
Height
1.6mm
Width
2.6mm
Maximum Power Dissipation
2.8 W
Minimum Operating Temperature
-55 °C
Dimensions
4.6 x 2.6 x 1.6mm
Maximum Operating Temperature
+150 °C
Length
4.6mm
Country of Origin
China
Product details