Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
400 V
Package Type
E-Line
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.77 x 2.41 x 4.01mm
Maximum Operating Temperature
+200 °C
Country of Origin
China
Product details
High Voltage Transistors, Diodes Inc
Transistors, Diodes Inc
P.O.A.
1
P.O.A.
1
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Technical documents
Specifications
Brand
DiodesZetexTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
400 V
Package Type
E-Line
Mounting Type
Through Hole
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
50
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
4.77 x 2.41 x 4.01mm
Maximum Operating Temperature
+200 °C
Country of Origin
China
Product details