Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA

RS Stock No.: 669-7616Brand: DiodesZetexManufacturers Part No.: ZXMP10A13FTA
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Typical Gate Charge @ Vgs

1.8 nC @ 5 V, 3.5 nC @ 10 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

P.O.A.

Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
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P.O.A.

Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA

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Select packaging type

Stock information temporarily unavailable.

quantityUnit price
25 - 100P.O.A.
125 - 475P.O.A.
500 - 1225P.O.A.
1250 - 2475P.O.A.
2500+P.O.A.

Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

700 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

806 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.05mm

Typical Gate Charge @ Vgs

1.8 nC @ 5 V, 3.5 nC @ 10 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Country of Origin

China

Product details

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.