EPCOS 1-Element Bi-Directional TVS Diode, 2 kW, 2-Pin 0603

RS Stock No.: 496-2980PBrand: EPCOSManufacturers Part No.: B72500D0150A060
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Technical documents

Specifications

Brand

Epcos

Diode Configuration

Single

Product Type

TVS Diode

Direction Type

Bi-Directional

Minimum Breakdown Voltage Vbr

22V

Mount Type

Surface

Package Type

0603

Maximum Reverse Stand-off Voltage Vwm

16V

Pin Count

2

Peak Pulse Power Dissipation Pppm

2kW

Clamping Voltage VC

42V

Minimum Operating Temperature

-40°C

Test Current It

1mA

Maximum Peak Pulse Current Ippm

30A

ESD Protection

Yes

Number of Elements per Chip

1

Maximum Operating Temperature

85°C

Height

0.9mm

Length

1.75mm

Standards/Approvals

No

Series

B7

Maximum Reverse Leakage Current

10μA

Automotive Standard

No

Product details

SMT Transient Suppressors - CDS3 Series

Bi-directional ceramic semiconductors optimized for high performance in ESD applications.

High ESD robustness (minimum 3000 ESD pulses)
Routes all ESD events, both positive and negative, safely to ground
Lead-free nickel barrier terminations

Standards

IEC 61000-4-2 Level 4

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P.O.A.

EPCOS 1-Element Bi-Directional TVS Diode, 2 kW, 2-Pin 0603
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P.O.A.

EPCOS 1-Element Bi-Directional TVS Diode, 2 kW, 2-Pin 0603

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quantityUnit price
100 - 225P.O.A.
250+P.O.A.

Technical documents

Specifications

Brand

Epcos

Diode Configuration

Single

Product Type

TVS Diode

Direction Type

Bi-Directional

Minimum Breakdown Voltage Vbr

22V

Mount Type

Surface

Package Type

0603

Maximum Reverse Stand-off Voltage Vwm

16V

Pin Count

2

Peak Pulse Power Dissipation Pppm

2kW

Clamping Voltage VC

42V

Minimum Operating Temperature

-40°C

Test Current It

1mA

Maximum Peak Pulse Current Ippm

30A

ESD Protection

Yes

Number of Elements per Chip

1

Maximum Operating Temperature

85°C

Height

0.9mm

Length

1.75mm

Standards/Approvals

No

Series

B7

Maximum Reverse Leakage Current

10μA

Automotive Standard

No

Product details

SMT Transient Suppressors - CDS3 Series

Bi-directional ceramic semiconductors optimized for high performance in ESD applications.

High ESD robustness (minimum 3000 ESD pulses)
Routes all ESD events, both positive and negative, safely to ground
Lead-free nickel barrier terminations

Standards

IEC 61000-4-2 Level 4