Technical documents
Specifications
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Dimensions
15.8 x 5 x 18.9mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
P.O.A.
Standard
1
P.O.A.
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
| quantity | Unit price |
|---|---|
| 1 - 24 | P.O.A. |
| 25 - 99 | P.O.A. |
| 100 - 249 | P.O.A. |
| 250 - 499 | P.O.A. |
| 500+ | P.O.A. |
Technical documents
Specifications
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Dimensions
15.8 x 5 x 18.9mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
