onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3PN, Through Hole

RS Stock No.: 671-5395Brand: Fairchild SemiconductorManufacturers Part No.: FGA25N120ANTDTU
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Technical documents

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Dimensions

15.8 x 5 x 18.9mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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P.O.A.

onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3PN, Through Hole
Select packaging type

P.O.A.

onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3PN, Through Hole

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit price
1 - 24P.O.A.
25 - 99P.O.A.
100 - 249P.O.A.
250 - 499P.O.A.
500+P.O.A.
You may be interested in

Technical documents

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-3PN

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Dimensions

15.8 x 5 x 18.9mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Product details

Discrete IGBTs, 1000V and over, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

You may be interested in