Hamamatsu, S12023-10 Near Infrared Radiation Si PIN Photodiode, Through Hole TO-18

RS Stock No.: 482-423Brand: Hamamatsu PhotonicsManufacturers Part No.: S12023-10
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Technical documents

Specifications

Brand

Hamamatsu Photonics

Spectrums Detected

Near Infrared Radiation

Wavelength of Peak Sensitivity

800nm

Package Type

TO-18

Mounting Type

Through Hole

Number of Pins

3

Diode Material

Si

Country of Origin

Japan

Stock information temporarily unavailable.

P.O.A.

Hamamatsu, S12023-10 Near Infrared Radiation Si PIN Photodiode, Through Hole TO-18

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Hamamatsu, S12023-10 Near Infrared Radiation Si PIN Photodiode, Through Hole TO-18
Stock information temporarily unavailable.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Technical documents

Specifications

Brand

Hamamatsu Photonics

Spectrums Detected

Near Infrared Radiation

Wavelength of Peak Sensitivity

800nm

Package Type

TO-18

Mounting Type

Through Hole

Number of Pins

3

Diode Material

Si

Country of Origin

Japan