Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
170 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Country of Origin
Germany
Product details
General Purpose NPN Transistors, Infineon
Bipolar Transistors, Infineon
P.O.A.
1
P.O.A.
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
45 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
500 mW
Minimum DC Current Gain
250
Transistor Configuration
Single
Maximum Collector Base Voltage
50 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
170 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Country of Origin
Germany
Product details
