Infineon BC849CE6327HTSA1 NPN Bipolar Transistor, 100 mA, 30 V, 3-Pin SOT-23
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Product details
Small Signal NPN Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
3000
P.O.A.
3000
Technical documents
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Product details