Infineon, BCR108SH6327XTSA1, Dual NPN Digital Transistor 50 V 2.2 kΩ, Ratio Of 0.047, 6-Pin SOT-363

RS Stock No.: 857-8242Brand: InfineonManufacturers Part No.: BCR108SH6327XTSA1
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Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum Collector Emitter Voltage

50 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

250 mW

Minimum DC Current Gain

70

Transistor Configuration

Isolated

Maximum Emitter Base Voltage

5 V

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Resistor Ratio

0.047

Dimensions

2 x 1.25 x 0.8mm

Typical Input Resistor

2.2 kΩ

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P.O.A.

Infineon, BCR108SH6327XTSA1, Dual NPN Digital Transistor 50 V 2.2 kΩ, Ratio Of 0.047, 6-Pin SOT-363

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Infineon, BCR108SH6327XTSA1, Dual NPN Digital Transistor 50 V 2.2 kΩ, Ratio Of 0.047, 6-Pin SOT-363
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum Collector Emitter Voltage

50 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

250 mW

Minimum DC Current Gain

70

Transistor Configuration

Isolated

Maximum Emitter Base Voltage

5 V

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Resistor Ratio

0.047

Dimensions

2 x 1.25 x 0.8mm

Typical Input Resistor

2.2 kΩ