Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343

RS Stock No.: 167-964Brand: InfineonManufacturers Part No.: BFP183WH6327XTSA1
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Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

65 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

450 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8000 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

0.9 x 2 x 1.25mm

Maximum Operating Temperature

+150 °C

Country of Origin

Malaysia

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343
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Available in multiples of 50.

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50

Available in multiples of 50
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150P.O.A.
200P.O.A.
250P.O.A.
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350P.O.A.
400P.O.A.
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650P.O.A.
700P.O.A.
750P.O.A.

P.O.A.

Infineon BFP183WH6327XTSA1 NPN RF Bipolar Transistor, 65 mA, 12 V, 4-Pin SOT-343
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 50.

Production -

Available in multiples of 50.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

50

Available in multiples of 50
50P.O.A.
100P.O.A.
150P.O.A.
200P.O.A.
250P.O.A.
300P.O.A.
350P.O.A.
400P.O.A.
450P.O.A.
500P.O.A.
550P.O.A.
600P.O.A.
650P.O.A.
700P.O.A.
750P.O.A.

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
50 - 200P.O.A.
250 - 450P.O.A.
500 - 950P.O.A.
1000 - 2450P.O.A.
2500+P.O.A.
You may be interested in

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

65 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-343

Mounting Type

Surface Mount

Maximum Power Dissipation

450 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8000 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

0.9 x 2 x 1.25mm

Maximum Operating Temperature

+150 °C

Country of Origin

Malaysia

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

You may be interested in