Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP

RS Stock No.: 170-2255Brand: InfineonManufacturers Part No.: BFP840FESDH6327XTSA1
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Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

75 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

2.9 V

Maximum Operating Frequency

85 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.4 x 0.8 x 0.55mm

Maximum Operating Temperature

+150 °C

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P.O.A.

Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP

P.O.A.

Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP
Stock information temporarily unavailable.

Technical documents

Specifications

Transistor Type

NPN

Maximum DC Collector Current

35 mA

Maximum Collector Emitter Voltage

2.25 V

Package Type

TSFP

Mounting Type

Surface Mount

Maximum Power Dissipation

75 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

2.9 V

Maximum Operating Frequency

85 GHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.4 x 0.8 x 0.55mm

Maximum Operating Temperature

+150 °C