Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323

RS Stock No.: 826-9364Brand: InfineonManufacturers Part No.: BFR193WH6327XTSA1
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Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

80 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Maximum Power Dissipation

580 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8 GHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

2 x 1.25 x 0.8mm

Maximum Operating Temperature

+150 °C

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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P.O.A.

Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323
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Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

P.O.A.

Infineon BFR193WH6327XTSA1 NPN RF Bipolar Transistor, 80 mA, 12 V, 3-Pin SOT-323
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

100

Available in multiples of 100
100P.O.A.
200P.O.A.
300P.O.A.
400P.O.A.
500P.O.A.
600P.O.A.
700P.O.A.
800P.O.A.
900P.O.A.
1000P.O.A.
1100P.O.A.
1200P.O.A.
1300P.O.A.
1400P.O.A.
1500P.O.A.

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

80 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-323 (SC-70)

Mounting Type

Surface Mount

Maximum Power Dissipation

580 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

8 GHz

Pin Count

3

Number of Elements per Chip

1

Dimensions

2 x 1.25 x 0.8mm

Maximum Operating Temperature

+150 °C

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon