Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23

RS Stock No.: 892-2365Brand: InfineonManufacturers Part No.: BFR93AE6327HTSA1
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Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

90 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 1mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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P.O.A.

Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23
Select packaging type

Standard

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Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 100
1P.O.A.
101P.O.A.
201P.O.A.
301P.O.A.
401P.O.A.
501P.O.A.
601P.O.A.
701P.O.A.
801P.O.A.
901P.O.A.
1001P.O.A.
1101P.O.A.
1201P.O.A.
1301P.O.A.
1401P.O.A.

P.O.A.

Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 100.

Production -

Available in multiples of 100.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 100
1P.O.A.
101P.O.A.
201P.O.A.
301P.O.A.
401P.O.A.
501P.O.A.
601P.O.A.
701P.O.A.
801P.O.A.
901P.O.A.
1001P.O.A.
1101P.O.A.
1201P.O.A.
1301P.O.A.
1401P.O.A.

Stock information temporarily unavailable.

Please check again later.

You may be interested in

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum DC Collector Current

90 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 1mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

You may be interested in