Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363

RS Stock No.: 752-8148Brand: InfineonManufacturers Part No.: BFS481H6327XTSA1
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Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

175 mW

Transistor Configuration

Isolated

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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Stock information temporarily unavailable.

P.O.A.

Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

P.O.A.

Infineon BFS481H6327XTSA1 Dual NPN Transistor, 12 V, 6-Pin SOT-363
Stock information temporarily unavailable.

1

Available in multiples of 10
1P.O.A.
11P.O.A.
21P.O.A.
31P.O.A.
41P.O.A.
51P.O.A.
61P.O.A.
71P.O.A.
81P.O.A.
91P.O.A.
101P.O.A.
111P.O.A.
121P.O.A.
131P.O.A.
141P.O.A.

Stock information temporarily unavailable.

Please check again later.

You may be interested in

Technical documents

Specifications

Brand

Infineon

Transistor Type

NPN

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-363 (SC-88)

Mounting Type

Surface Mount

Maximum Power Dissipation

175 mW

Transistor Configuration

Isolated

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Pin Count

6

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Dimensions

2 x 1.25 x 0.8mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

You may be interested in