N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON Infineon BSC036NE7NS3GATMA1

RS Stock No.: 170-2317Brand: InfineonManufacturers Part No.: BSC036NE7NS3GATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

63.4 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.35mm

Number of Elements per Chip

1

Length

5.35mm

Forward Diode Voltage

1.2V

Series

BSC036NE7NS3 G

Minimum Operating Temperature

-55 °C

Height

1.1mm

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P.O.A.

N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON Infineon BSC036NE7NS3GATMA1

P.O.A.

N-Channel MOSFET, 100 A, 75 V, 8-Pin TDSON Infineon BSC036NE7NS3GATMA1
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

75 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Typical Gate Charge @ Vgs

63.4 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

6.35mm

Number of Elements per Chip

1

Length

5.35mm

Forward Diode Voltage

1.2V

Series

BSC036NE7NS3 G

Minimum Operating Temperature

-55 °C

Height

1.1mm