N-Channel MOSFET, 80 A, 30 V, 8-Pin TDSON Infineon BSC050N03LSGATMA1

RS Stock No.: 170-2271Brand: InfineonManufacturers Part No.: BSC050N03LSGATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

13 nC @ 4.5 V

Width

6.35mm

Number of Elements per Chip

1

Series

BSC050N03LS G

Forward Diode Voltage

1.1V

Height

1.1mm

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 80 A, 30 V, 8-Pin TDSON Infineon BSC050N03LSGATMA1

P.O.A.

N-Channel MOSFET, 80 A, 30 V, 8-Pin TDSON Infineon BSC050N03LSGATMA1
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5.49mm

Typical Gate Charge @ Vgs

13 nC @ 4.5 V

Width

6.35mm

Number of Elements per Chip

1

Series

BSC050N03LS G

Forward Diode Voltage

1.1V

Height

1.1mm

Minimum Operating Temperature

-55 °C