N-Channel MOSFET, 24 A, 200 V, 8-Pin TDSON Infineon BSC500N20NS3GATMA1

RS Stock No.: 170-2304Brand: InfineonManufacturers Part No.: BSC500N20NS3GATMA1
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

1.1mm

Series

BSC500N20NS3 G

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET, 24 A, 200 V, 8-Pin TDSON Infineon BSC500N20NS3GATMA1

P.O.A.

N-Channel MOSFET, 24 A, 200 V, 8-Pin TDSON Infineon BSC500N20NS3GATMA1
Stock information temporarily unavailable.

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.35mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

1.1mm

Series

BSC500N20NS3 G

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C