Infineon SRAM, CY62148ELL-55SXI- 4Mbit

RS Stock No.: 124-2941Brand: InfineonManufacturers Part No.: CY62148ELL-55SXI
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Technical documents

Specifications

Brand

Infineon

Memory Size

4Mbit

Organisation

512K x 8 bit

Number of Words

512K

Number of Bits per Word

8bit

Maximum Random Access Time

45ns

Address Bus Width

8bit

Clock Frequency

1MHz

Low Power

Yes

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

32

Dimensions

20.75 x 11.43 x 2.81mm

Height

2.81mm

Maximum Operating Supply Voltage

5.5 V

Width

11.43mm

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

4.5 V

Maximum Operating Temperature

+85 °C

Length

20.75mm

Product details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

SRAM (Static Random Access Memory)

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P.O.A.

Infineon SRAM, CY62148ELL-55SXI- 4Mbit
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

Infineon SRAM, CY62148ELL-55SXI- 4Mbit
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Technical documents

Specifications

Brand

Infineon

Memory Size

4Mbit

Organisation

512K x 8 bit

Number of Words

512K

Number of Bits per Word

8bit

Maximum Random Access Time

45ns

Address Bus Width

8bit

Clock Frequency

1MHz

Low Power

Yes

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

32

Dimensions

20.75 x 11.43 x 2.81mm

Height

2.81mm

Maximum Operating Supply Voltage

5.5 V

Width

11.43mm

Minimum Operating Temperature

-40 °C

Minimum Operating Supply Voltage

4.5 V

Maximum Operating Temperature

+85 °C

Length

20.75mm

Product details

Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor

The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

SRAM (Static Random Access Memory)