Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

RS Stock No.: 244-5819PBrand: InfineonManufacturers Part No.: FD150R12RT4HOSA1
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Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

790 W

Number of Transistors

1

P.O.A.

Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V
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Production pack (Tray)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Infineon FD150R12RT4HOSA1 IGBT Module, 150 A 1200 V

Stock information temporarily unavailable.

Select packaging type

Production pack (Tray)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Technical documents

Specifications

Brand

Infineon

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

790 W

Number of Transistors

1