Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

RS Stock No.: 260-8887Brand: InfineonManufacturers Part No.: FF50R12RT4HOSA1
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Technical documents

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount

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P.O.A.

Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount

P.O.A.

Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Stock information temporarily unavailable.

Technical documents

Specifications

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

285 W

Number of Transistors

2

Package Type

AG-34MM

Configuration

Dual

Mounting Type

Chassis Mount