Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
ECONODUAL
Configuration
Dual
Channel Type
N
Pin Count
11
Transistor Configuration
Dual
P.O.A.
Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL
Select packaging type
Standard
1
P.O.A.
Infineon FF600R12ME4B72BOSA1 Dual IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Technical documents
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
20V
Maximum Power Dissipation
20 mW
Number of Transistors
2
Package Type
ECONODUAL
Configuration
Dual
Channel Type
N
Pin Count
11
Transistor Configuration
Dual
